Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
نویسندگان
چکیده
منابع مشابه
Introduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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Highly uniform, smooth, and conformal coatings of higher nitrides of hafnium and zirconium were produced by atomic layer deposition from homoleptic tetrakis(dialkylamido)metal(IV) complexes and ammonia at low substrate temperatures (150-250 °C). The precursor vapors were alternately pulsed into a heated reactor, yielding 1.15-1.20 Å of metal nitride film for every cycle. Successful depositions ...
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Atomic layer deposition (ALD) is a process for depositing highly uniform and conformal thin films by alternating exposures of a surface to vapours of two chemical reactants. ALD processes have been successfully demonstrated for many metal compounds, but for only very few pure metals. Here we demonstrate processes for the ALD of transition metals including copper, cobalt, iron and nickel. Homole...
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Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociat...
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ژورنال
عنوان ژورنال: ECS Transactions
سال: 2019
ISSN: 1938-6737
DOI: 10.1149/1.2721476